High Electron Mobility Transistor Market Overview
The Global market for High electron mobility transistor is forecast to reach $2.8 billion by 2026, growing at a CAGR of 15.2% from 2021 to 2026. The market growth is attributed to the factors such as rapid industrialisation, technological developments, and growing demand from consumer electronics, automobiles industries and others. One of the first selections for these components is the GaN HEMTs. Active electronic sensor arrays are constructed from GaN-based HEMTs, used for airborne radars, ground-based air defense radars, and naval radar. In a standard DBS receiver, discrete HEMTs are almost often used as the preamplifier, accompanied by one or more GaAs MESFET monolithic microwave integrated circuits (MMICs) including heterostructure FET (Field Effect Transistors) and modulation-doped FET due to their excellent low-noise characteristics.
- High Gain, high Switching Speed, higher efficiency, Small source resistance, High gain-bandwidth, and others add up to its features for various application and boosts the market growth.
- North America dominate the global high electron mobility transistor market in the forecast period 2021-2026 owing to technological developments, growth of consumer electronics, automobile and other industries.
High Electron Mobility Transistor Market, By Geography, 2020
High Electron Mobility Transistor Market Segment Analysis - By Type
High Electron Mobility Transistor Market Segment Analysis - By Application Type
High Electron Mobility Transistor Market Segment Analysis – By Geography
High Electron Mobility Transistor Market Drivers
Growth of Consumer electronics
The growing demand of consumer electronics and the applicability of high electron mobility transistor tends to drive the market growth. High electron mobility transistors produce high gain, making these transistors very useful as amplifiers. They can quickly switch speeds. And finally, very low noise values are produced as the current variations in these transistors are relatively low.
Growing Usage in Automotive Sector
The Automotive sector is increasingly utilizing HEMT solutions. A hybrid vehicle (HV) and electric vehicle (EV) systems use many power switching devices. Higher performances than Si power device, for instance, low on-resistance, high speed, high operating temperature, are highly required for future development of the HV / EV. GaN power devices are gaining significant attention for applications. Small signal amplifiers, power amplifiers, oscillators and mixers working at frequencies up to 60 GHz and more are commonly used in low-noise signal amplifiers owing to their noise efficiency. In reality, HEMT devices are used for a broad variety of RF architecture applications. Consequently these features along with its applications leverages a positive impact on the market growth.
High Electron Mobility Transistor Market Challenges
The reliability of GAN HEMTs and the millimetre of microwave integrated circuits are still a relevant issue for the market penetration of these devices. The role of temperature in fostering GAN HEMT loss is uncertain, and the amplification of deterioration factors is generally unknown.
High Electron Mobility Transistor Market Landscape
Partnerships and acquisitions along with product launches are the key strategies adopted by the players in the high electron mobility transistor market. As of 2019, the market for high electron mobility transistor market is consolidated with the top players including Fujitsu, Mitsubishi Electric, Ampleon, Qorvo, Oki Electric, Lake Shore Cryotronics, Cree, TOSHIBA, Microsemi and among others.
- In June 2021, STMicroelectronics recently announced a new family of GaN parts designated STi2GaN, which stands for ST Intelligent and Integrated GaN. The parts use ST’s bond-wire-free packaging technology to provide robustness and reliability.The new product family aims to leverage the high-power density and efficiency of GaN to offer a range of 100- and 650-V high-electron-mobility transistor (HEMT) devices.
- In January 2019, researchers at Urbana-Champaign at the University of Illinois advanced gallium nitride on silicon transistor technology by optimizing the composition of the layers of semiconductors that make up the unit. Working with industry collaborators Veeco and IBM, the team developed a high mobility electron transistor system on a 200 mm silicon substratum with a method scalable to broader typical wafer sizes in the market.
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